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Effects of Process Conditions on the Performance of Large Grain Poly-Silicon on Insulator (LPSOI) MOSFET for Advanced CMOS Applications
Published online by Cambridge University Press: 15 March 2011
Abstract
Effects of process annealing temperature on Metal-Induced-Lateral-Crystallization (MILC) growth rate and quality of MILC polysilicon formed were studied. Raman spectrum analysis was employed for material characterization. MILC polysilicon layer, which was formed by applying an optimum annealing condition together with post high temperature annealing, could be used to fabricate Thin-Film-Transistor (TFT) with considerably electrical improvements. This reflected that good quality of the polysilicon layer. It is believed that the proposed MILC formation method can be empolyed to produce large grain polysilicon on insulator (LPSOI) for advanced devices and circuits' fabrication.
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- Copyright © Materials Research Society 2002
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