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Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si
Published online by Cambridge University Press: 22 February 2011
Abstract
Effects of post-well drive intrinsic gettering (PWIG) upon the integrity of thin gate oxide in Cz Si wafers with carbon levels, Cs, ranged from 0.2 - ∼ 4 ppma were investigated. A 10 nm thick gate oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. Our data have shown that PWIG cycles and/or carbon impurity affect both bulk oxygen precipitation and minority carrier lifetime, but not the oxide integrity.
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- Copyright © Materials Research Society 1988
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