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The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs

Published online by Cambridge University Press:  15 March 2011

G.Y. Chung ,
C.C. Tin ,
J. R. Williams ,
K. McDonald ,
M. Di Ventra ,
S.T. Pantelides ,
L.C. Feldman  and
R.A. Weller
G.Y. Chung
Affiliation:
Physics Department, Auburn University, AL 36849
C.C. Tin
Affiliation:
Physics Department, Auburn University, AL 36849
J. R. Williams
Affiliation:
Physics Department, Auburn University, AL 36849
K. McDonald
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
M. Di Ventra
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
S.T. Pantelides
Affiliation:
Also at Oak Ridge National Laboratory, Oak Ridge TN 37831
L.C. Feldman
Affiliation:
Also at Oak Ridge National Laboratory, Oak Ridge TN 37831
R.A. Weller
Affiliation:
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235
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Abstract

Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T8.7.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Casady, J.B. and Johnson, R.W., Solid State Electronics 30 1409 (1996).Google Scholar
[2] Cooper, J.A., Phys. Stat. Sol. (A) 162 305 (1997).Google Scholar
[3] EMIS Data Reviews Series No. 13, ed. Harris, G.L., Short Run Press, Exeter, England, 1995.Google Scholar
[4] Schorner, R., Friedrichs, P., Peters, D. and Stephani, D., IEEE Electron Device Lett. 20 241 (1999).Google Scholar
[5] Afanasev, V.V., Bassler, M., Pensl, G. and Schulz, M., Phys. Stat. Sol. (A) 162 321 (1997).Google Scholar
[6] Chung, G.Y., Tin, C.C., Won, J. H., Williams, J.R., McDonald, K., Weller, R.A., Pantelides, S.T. and Feldman, L.C., Proc. 2000 IEEE Aerospace Conf. (to be published).Google Scholar
[7] Lipkin, L.A. and Palmour, J.W., J. Electronic Materials 25(5) 909 (1996).Google Scholar
[8] Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Ventra, M. Di, Pantelides, S.T., Feldman, L.C. and Weller, R.A., Appl. Phys. Lett. 76(13) 1713 (2000).Google Scholar
[9] McDonald, K., Haung, M.B., Weller, R.A., Feldman, L.C., Williams, J.R., Stedile, F.C., Baumvol, I.J.R. and Radtke, C., Appl. Phys. Lett. 76(5) 568 (2000).Google Scholar
[10] Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Ventra, M. Di, Weller, R.A.. Pantelides, S.T. and Feldman, L.C., submitted to IEEE Elect. Dev. Lett.Google Scholar
[11] Deal, B.E., Mackenna, E.L., and Castro, P.L., J. Electochem. Soc. 116 997 (1969).Google Scholar
[12] Campi, J., Shi, Y., Luo, Y., Yan, F. and Zhao, J.H., IEEE Trans. Electron Devs. 46(3) 511 (1999).Google Scholar
[13] Suzuki, S., Fuluda, K., Okushi, H., Nagai, K., Sekigawa, T., Yoshida, S., Tanaka, T. and Arai, K., Proc.1999 Intl. Conf. on Silicon Carbide and Related Materials, (to be published)Google Scholar