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The Effects of Plasma Induced Damage on The Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching(RIE) and Plasma Ashing Processes

Published online by Cambridge University Press:  01 February 2011

Hokyun Ahn ,
Honggu Ji ,
Jaekyoung Mun ,
Min Park  and
Haecheon Kim
Hokyun Ahn
Affiliation:
Wireless Communication Devices Department, Basic Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161, Kajong-Dong, Yusong-Gu, Taejon, Korea 305-600
Honggu Ji
Affiliation:
Wireless Communication Devices Department, Basic Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161, Kajong-Dong, Yusong-Gu, Taejon, Korea 305-600
Jaekyoung Mun
Affiliation:
Wireless Communication Devices Department, Basic Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161, Kajong-Dong, Yusong-Gu, Taejon, Korea 305-600
Min Park
Affiliation:
Wireless Communication Devices Department, Basic Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161, Kajong-Dong, Yusong-Gu, Taejon, Korea 305-600
Haecheon Kim
Affiliation:
Wireless Communication Devices Department, Basic Research Laboratory Electronics and Telecommunications Research Institute (ETRI) 161, Kajong-Dong, Yusong-Gu, Taejon, Korea 305-600
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Abstract

The gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during reactive ion etching and plasma ashing processes have been investigated. The plasma induced damage was characterized by sheet resistance measurement, Xray photoelectron spectroscopy(XPS) and auger electron spectroscopy(AES) of different etched surfaces, compared with a chemically wet-etched reference surface. Also the effect of the plasma induced damage on the device performance was investigated. As a result, plasma ashing can deteriorate the plasma-induced damage by RIE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 720: Symposium H – Materials Issues for Tunable RF and Microwave Devices III , 2002 , H3.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Moulder, J. F., Stickle, William F., Sobol, Peter E. and Bomben, Kenneth D., “Handbook of Xray Photoelectron Spectroscopy”Google Scholar
2. Vodjdani, N. and Parrens, P., J. Vac. Sci. Technol. B5(6), Nov/Dec 1591 (1987)Google Scholar
3. Ren, F., Lee, J. W., Abernathy, C. R., Pearton, S. J., Constantine, C., Barratt, C. and Shul, R. J., J. Vac. Sci. Technol. B 15(4), Jul/Aug, 1956 (1997)Google Scholar