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Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

Published online by Cambridge University Press:  15 February 2011

A. H. Bensaoula ,
A. Freundlich ,
A. Bensaoula  and
V. Rossignol
A. H. Bensaoula
Affiliation:
Space Vacuum Epitaxy center, University of Houston, Houston, TX 77204-5507
A. Freundlich
Affiliation:
Space Vacuum Epitaxy center, University of Houston, Houston, TX 77204-5507
A. Bensaoula
Affiliation:
Space Vacuum Epitaxy center, University of Houston, Houston, TX 77204-5507
V. Rossignol
Affiliation:
Space Vacuum Epitaxy center, University of Houston, Houston, TX 77204-5507
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Abstract

Phosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 231
Copyright
Copyright © Materials Research Society 1993

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