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Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

Published online by Cambridge University Press:  16 February 2011

H. S. Hajghassem
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
W. D. Brown
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. R. Yeargan
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. G. Williams
Affiliation:
Dept. of Nuclear Engineering, University of Illinois at Urbana-Champaign, Urbana, IL.
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Abstract

This paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Barnes, C.E. and Wiczer, J., Sandia National Laboratories Report No. SAND-84-0771, Albuquerque, NM, May 1984.Google Scholar
2. Aukerman, L., Millea, M. and Mccoll, M., IEEE Trans. Nuc. Sci. 13, No.6, 194 (1976).Google Scholar
3. Sze, S.M., Physics of Semiconductors, (Wiley-Interscience New York, 1969), p. 104.Google Scholar
4. Sah, C.T., Noyce, R.N. and Shockley, W., Proc. IRE, 45, 1228 (1957).10.1109/JRPROC.1957.278528Google Scholar
5. Sah, C.T., Proc. IRE, 49 603 (1961).10.1109/JRPROC.1961.287741Google Scholar
6. Opdorp, C.V. and Hooft, G.W., Solid State Electron, 27, 261 (1984).10.1016/0038-1101(84)90122-9Google Scholar
7. Rose, B.H. and Barnes, C.E., J. Appl. Phys. 53, 1772 (1982).10.1063/1.331649Google Scholar
8. Barnes, C.E., J. Appl. Phys. 50, 5242 (1979).10.1063/1.326619Google Scholar
9. Schrantz, G. et al., IEEE Trans. Nucl. Sci., 35, 1657 (1988).10.1109/23.25516Google Scholar
10 Barry, A.L., Wojcik, R. and MacDiarmid, L., IEEE Trans. Nuc. Sci. 36, No.6, 2400 (1989).10.1109/23.45454Google Scholar