Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-05T17:11:20.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

Published online by Cambridge University Press:  16 February 2011

H. S. Hajghassem ,
W. D. Brown ,
J. R. Yeargan  and
J. G. Williams
H. S. Hajghassem
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
W. D. Brown
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. R. Yeargan
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. G. Williams
Affiliation:
Dept. of Nuclear Engineering, University of Illinois at Urbana-Champaign, Urbana, IL.
Get access

Abstract

This paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 151
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Barnes, C.E. and Wiczer, J., Sandia National Laboratories Report No. SAND-84-0771, Albuquerque, NM, May 1984.Google Scholar
2. Aukerman, L., Millea, M. and Mccoll, M., IEEE Trans. Nuc. Sci. 13, No.6, 194 (1976).Google Scholar
3. Sze, S.M., Physics of Semiconductors, (Wiley-Interscience New York, 1969), p. 104.Google Scholar
4. Sah, C.T., Noyce, R.N. and Shockley, W., Proc. IRE, 45, 1228 (1957).10.1109/JRPROC.1957.278528Google Scholar
5. Sah, C.T., Proc. IRE, 49 603 (1961).10.1109/JRPROC.1961.287741Google Scholar
6. Opdorp, C.V. and Hooft, G.W., Solid State Electron, 27, 261 (1984).10.1016/0038-1101(84)90122-9Google Scholar
7. Rose, B.H. and Barnes, C.E., J. Appl. Phys. 53, 1772 (1982).10.1063/1.331649Google Scholar
8. Barnes, C.E., J. Appl. Phys. 50, 5242 (1979).10.1063/1.326619Google Scholar
9. Schrantz, G. et al., IEEE Trans. Nucl. Sci., 35, 1657 (1988).10.1109/23.25516Google Scholar
10 Barry, A.L., Wojcik, R. and MacDiarmid, L., IEEE Trans. Nuc. Sci. 36, No.6, 2400 (1989).10.1109/23.45454Google Scholar