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Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes
Published online by Cambridge University Press: 16 February 2011
Abstract
This paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.
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- Copyright © Materials Research Society 1990