Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T08:14:22.001Z Has data issue: false hasContentIssue false

Effects of misfit strain on properties of ZnO films grown by pulsed laser deposition

Published online by Cambridge University Press:  17 March 2011

M.C. Park
Affiliation:
Information & Electronic Materials Laboratory, Dept. of Metallurgical Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
W.H. Yoon
Affiliation:
Information & Electronic Materials Laboratory, Dept. of Metallurgical Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
D.H. Lee
Affiliation:
Information & Electronic Materials Laboratory, Dept. of Metallurgical Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
J.M. Myoung
Affiliation:
Information & Electronic Materials Laboratory, Dept. of Metallurgical Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
S.H. Bae
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
S.Y. Lee
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
I. Yun
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Korea
Get access

Abstract

A series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis were utilized to investigate the effects of misfit strain on the surface morphology and the crystallinity. The electrical and optical properties of the films were also investigated as a function of the film thickness. It was found that the crystalline quality, electrical and optical properties of the films depended on the film thickness and were improved with increasing the film thickness. This is attributed to the fact that the films thinner than 400 nm are under the severe misfit strain, which decreases as the film thickness increases further.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Srikant, V. and Clarke, D. R., J. Appl. Phys. 83 (1998) 5447.Google Scholar
2. , Hümmer, Phys. Status Solidi 56 (1973) 249.Google Scholar
3. Ryu, Y.R., Zhu, S., Look, D.C., Wrobel, J.M., Jeong, H.M. and White, H.W., J. Cryst. Growth 216 (2000) 330.Google Scholar
4. Yang, T. L., Zhang, D. H., Ma, J., Ma, H. L. and Chen, Y, Thin Solid Films 326 (1998) 60.Google Scholar
5. Francombe, M.H. and Krishnaswamy, S.V., J. Vac. Sci. Technol. A 8 (1990) 1382.Google Scholar
6. Bagnall, D. M., Chen, Y. F., Zhu, Z., Yao, T., Shen, M. Y. and Goto, T., Appl. Phys. Lett. 73 (1998) 1038.Google Scholar
7. Ryu, Y.R., Kim, W.J. and White, H.W., J. Cryst. Growth 219 (2000) 419.Google Scholar
8. Jin, B. J., Im, S. and Lee, S. Y., Thin Solid Films, 366 (2000) 107.Google Scholar
9. Tu, K.N., Mayer, J.W. and Feldman, L.C.: Electronic Thin Film Science For Electrical Engineers and Materials Scientists (Macmillan Publishing Company, New York, 1992), Chap. 7, p. 161.Google Scholar
10. Bagnall, D. M., Chen, Y. F., Shen, M. Y., Zhu, Z., Goto, T. and Yao, T., J. Cryst. Growth 184–185 (1998).605.Google Scholar