No CrossRef data available.
Article contents
Effects of MeV Si ion bombardments on the Properties of Nano-layers of SiO2/SiO2+Zn4Sb3
Published online by Cambridge University Press: 01 February 2011
Abstract
We prepared 8 periodic nano-layers of SiO2/SiO2+Zn4Sb3. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanostructures of Zn4Sb3 with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanostructures. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at various fluences to form nanostructures in layers of SiO2 containing Zn4Sb3. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG07-22
- Copyright
- Copyright © Materials Research Society 2007