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Effects of MBE growth on the optical properties of AlGaN quantum wells

Published online by Cambridge University Press:  16 September 2011

W. Feng ,
G. Rajanna ,
S. Sohal ,
S. A. Nikishin ,
A. A. Bernussi  and
M. Holtz
W. Feng
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
G. Rajanna
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
S. Sohal
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Physics, Texas Tech University, Lubbock, TX 79409, U.S.A.
S. A. Nikishin
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
A. A. Bernussi
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
M. Holtz
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Physics, Texas Tech University, Lubbock, TX 79409, U.S.A.
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Abstract

Optical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.

Keywords

crystal growthmolecular beam epitaxy (MBE)epitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1289: Symposium H – Controlling Material Properties and Charge-Carrier Interactions with Quantum-Dot Coupling , 2011 , mrsf10-1289-h05-12
Copyright
Copyright © Materials Research Society 2011

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References

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