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Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode

Published online by Cambridge University Press:  26 February 2011

Chen Ding  and
Raphael Tsu
Chen Ding
Affiliation:
Department of Electrical Engineering, UNC Charlotte, Charlotte, NC 28223
Raphael Tsu
Affiliation:
Department of Electrical Engineering, UNC Charlotte, Charlotte, NC 28223
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Abstract

The resonant tunneling via nanoscale silicon particles embedded in an a-SiO2 matrix in a diode structure has revealed a range of intriguing observations such as extremely sharp peaks and steps and periodic oscillations in (conductance-voltage) G-V measurements. Recently we have discovered a drastic sharpening of the conductance peak with light. Phase measurements show that the effects of light may be understood by invoking the filling of charged traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 757
Copyright
Copyright © Materials Research Society 1995

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References

1. Ye, Q. Y., Tsu, R., and Nicollian, E. H., Phys. Rev. B 44, 1806 (1991).Google Scholar
2. Tsu, R. and Esaki, L., Appl. Phys. Lett. 22, 562 (1973).Google Scholar
3. Tsu, R., Physica B 189, 235 (1993).Google Scholar
4. Nicollian, E. H. and Tsu, R., J. Appl. Phys. 74, 4020 (1993).Google Scholar
5. Ganasan, J. P., MS thesis, UNC Charlotte, 1995.Google Scholar
6. Tsu, R., Li, X., and Nicollian, E. H., Appl. Phys. Lett. 65, 842 (1994).Google Scholar
7. Boeringer, D. W. and Tsu, R., Phys. Rev. B 51 (15 May 1995).Google Scholar