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Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

Isao Yamada
Isao Yamada*
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan.
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Abstract

The effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surface. Atomic resolution TEM analysis suggests that the epitaxy of Al occurs not only on Si surfaces but also at Al/Al grain boundaries. These epitaxial films exhibit extremely high thermal stability and long electromigration life time. To understand the deposition features and film characteristics, the effects of ICB bombardment on the film growth at the initial stage of the deposition and the resultant film structure have been studied. The results show that the role of very low energy ion bombardment is especially important in forming epitaxial metal films. Depositions of Au and Cu on Si substrates have also been made to understand whether ICB deposition may improve the characteristics of other metal films. Preliminary results of these film depositions are also obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 113
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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