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Effects of ion beam irradiation on the crystallization of Copper films

Published online by Cambridge University Press:  21 February 2011

Shunichi Hishita ,
Keiji Oyoshi ,
Shigeru Suehara  and
Takashi Aizawa
Shunichi Hishita
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, [email protected]
Keiji Oyoshi
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, [email protected]
Shigeru Suehara
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, [email protected]
Takashi Aizawa
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, [email protected]
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Abstract

Radiation effects of 2 MeV Ar+ ions on the crystallization of copper films were investigated with or without oxygen adsorption. Metal copper films of 1-5 nm thickness deposited on SrTiO3 (100) at 300K. by evaporation consisted of fine crystals with random orientation. The crystals were grown without epitaxial relationship to the substrate by ion irradiation. The epitaxial growth of copper crystals was achieved by the combined use of oxygen adsorption and ion irradiation. The epitaxial relationship between the film and the substrate was determined Cu (100) // SrTiO3( 100) and Cu [001] // SrTiO3 [001].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

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