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Effects of Intermittent Deposition on the Defect Density in a-Si:H

Published online by Cambridge University Press:  16 February 2011

Toshihiro Kamei ,
Nobuhiro Hata  and
Akihisa Matsuda
Toshihiro Kamei
Affiliation:
Electrotechnical Laboratory 1–1–4 Umezono, Tsukuba 305, Japan
Nobuhiro Hata
Affiliation:
Electrotechnical Laboratory 1–1–4 Umezono, Tsukuba 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory 1–1–4 Umezono, Tsukuba 305, Japan
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Abstract

Effects of intermittent deposition on the defect density in hydrogenated Amorphous silicon (a-Si:H) are investigated at various substrate temperatures by using a mechanical shutter, while maintaining the discharge continuously. The intermittent deposition experiments, where monolayer growth and intermission (waiting time) are repeated in cycles, enable us to study surface dangling bond (DB) recombination and thermal hydrogen desorption separately from other reactions on the growth surface. The defect density in films prepared at lower substrate temperatures decreases with the waiting time, while that deposited at higher substrate temperatures increases with the waiting time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 31
Copyright
Copyright © Materials Research Society 1994

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References

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