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Effects of Initial Substrate Surface on Microstructure of Si3N4 Deposited by LPCVD

Published online by Cambridge University Press:  25 February 2011

Woo Y. Lee
Woo Y. Lee*
Affiliation:
United Technologies Research Center, East Hartford, CT 06108; Currently with Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6063
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Abstract

The morphology of Si3N4 deposited on Al2O3, BN, and SiC by low pressure chemical vapor deposition (LPCVD) was characterized as a function of deposition temperature. At 1200°C, faceted Si3N4 crystallites were deposited on SiC whereas Si3N4 deposited on the other substrates tended to be amorphous. With an increase in temperature to 1430°C, Si3N4 deposited on these substrates was polycrystalline. At this temperature, the microstructure of Si3N4 was not significantly influenced by the changes in substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 665
Copyright
Copyright © Materials Research Society 1993

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References

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