Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:04:53.187Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Impurities on the Optical Properties of Quantum Dots, Wires, and Multiple Wells

Published online by Cambridge University Press:  22 February 2011

Garneit W. Bryant
Garneit W. Bryant*
Affiliation:
Microphotonic Devices Branch, US Army Research Laboratory, Adelphi, MD 20783
Get access

Abstract

Identifying and understanding the effects of impurities and defects in quantum dots, wires, and multiple wells is important for the development of nanostructures with good optical properties. Simple model calculations are presented to show when and how shallow impurities affect the radiative recombination of confined electron-hole pairs. Results for nanostructures are compared with results for bulk systems. Qualitative differences between bulk and confined systems are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 49
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Optics of Excitons in Confined Systems, edited by D'Andrea, A., Sole, R. Del, Girlanda, R., and Quattropani, A. (The Institute of Physics, Bristol, 1992).Google Scholar
[2] Bryant, G. W., Phys. Rev. B 37, 8763 (1988).CrossRefGoogle Scholar
[3] Tang, Z. K., Yanase, A., Yasui, T., Segawa, Y., and Cho, K., Phys. Rev. Lett. 71, 1431 (1993).Google Scholar
[4] Brener, I., Knox, W. H., Goosen, K. W., and Cunningham, J. E., Phys. Rev. Lett. 70, 319 (1993) and the references therein to earlier work.Google Scholar
[5] Kash, K., Mahoney, D. D., Gaag, B. P. Van der, Gozdz, A. S., Harbison, J. P., and Florez, L. T., J. Vac. Sci. Technol. B 10, 2030 (1992).CrossRefGoogle Scholar
[6] Brunner, K., Bockelmann, U., Abstreiter, G., Walther, M., Bohm, G., Trankle, G., and Weimann, G., Phys. Rev. Lett. 69, 3216 (1992).CrossRefGoogle Scholar
[7] Bawendi, M. G., Wilson, W. L., Rothberg, L., Carroll, P. J., Jedju, T. M., Steigerwald, M. L., and Brus, L. E., Phys. Rev. Lett. 65, 1623 (1990).CrossRefGoogle Scholar
[8] Wormer, J., Joppien, M., Zimmerer, G., and Moller, T., Phys. Rev. Lett. 67, 2053 (1991).Google Scholar
[9] Bryant, G. W. (unpublished).Google Scholar
[10] Bryant, G. W., Phys. Rev. B 47, 1683 (1993).Google Scholar