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Effects of Impurities on the Kinetics of Nucleation and Growth in Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

J. A. Roth  and
G. L. Olson
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

The effects of intentionally introduced impurities on the crystallization time, nucleation rate and crystallite growth velocity during solid phase random crystallization of amorphous Si thin films have been determined. Films deposited in UHV onto oxidized Si wafers were subjected to multiple energy ion implantation to introduce uniform distributions of P, B, As, O or F at 0.1–1.0 at.%. Crystallization times and growth velocities were determined over the temperature range 650 to 850°C from time-resolved reflectivity measurements, and nucleation rates were determined from these data using a classical, steady state nucleation and growth model. Strong impurity effects are observed: P, B and As all decrease the nucleation rate but accelerate the growth of crystallites, whereas both 0 and F retard growth while enhancing nucleation. The largest effects are for P, which reduces the nucleation rate more than 100 times at 1% concentration, and F, which increases the rate by roughly the same amount.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 319
Copyright
Copyright © Materials Research Society 1987

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References

1. Blum, N. A. and Feldman, C., J. Non-Cryst. Sol. 11, 242 (1972).CrossRefGoogle Scholar
2. Koster, U., Phys. Stat. Sol. A48, 313 (1978).CrossRefGoogle Scholar
3. Zellama, K., Germain, P., Squelard, S., and Bourgoin, J. C., J. Appl. Phys. 50, 6995 (1979).CrossRefGoogle Scholar
4. Roth, J. A., Kokorowski, S., Olson, G. L., and Hess, L. D., in Laser and Electron-Beam Interactions With Solids, edited by Appleton, B. R. and Celler, G. K. (Elsevier Science Publishing Co., 1982), pp. 169–176.Google Scholar
5. Pai, C. S., Lau, S. S., and Suni, I., Thin Solid Films 109, 263 (1983).CrossRefGoogle Scholar
6. Olson, G. L., Kokorowski, S. A., Roth, J. A. and Hess, L. D., in Laser-Solid Interactions and Transient Processing of Materials, edited by Narayan, J., Brown, W. L., and Lemons, R. A. (Elsevier Science Publishing Co., 1983), p. 145.Google Scholar
7. Csepregi, L., Kennedy, E. F., Gallagher, T. J., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys. 48, 4234 (1977).CrossRefGoogle Scholar
8. Kennedy, E. F., Csepregi, L., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys. 48, 4241 (1977).CrossRefGoogle Scholar
9. Suni, I., Shreter, U., Nicolet, M-A., and Baker, J. E., J. Appl. Phys. 56, 273 (1984).CrossRefGoogle Scholar
10. Williams, J. S., in Surface Modification and Alloying, Edited by Poate, J. M., Foti, G., and Jacobson, D. C. (Plenum Publishing Corporation, 1983).Google Scholar
11. Yamamoto, H., Ishiwara, H., and Furukawa, S., Appl.Phys.Lett. 46, 268 (1985).CrossRefGoogle Scholar
12. Christian, J. W., in The Theory of Transformations in Metals and Alloys, (Pergamon Press, 1965) p. 21.Google Scholar
13. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids, vol.1 (Pergamon Press, 1985).Google Scholar
14. Olson, G. L., Roth, J. A., Nygren, E., Pogany, A. P., and Williams, J. S., (This Proceedings).Google Scholar
15. Ishiwara, H., Tamba, A., Yamamoto, H., and Furukawa, S., Jpn. J. Appl. Phys. 24, L513 (1985).CrossRefGoogle Scholar
16. Tamba, A., Yamamoto, H., Ishiwara, H., Furukawa, S., private communication.Google Scholar
17. Suni, I., Göltz, G., Nicolet, M-A. and Lau, S. S., Thin Solid Films 93, 171 (1982); I. Suni, G. Gö1tz, M. G. Grimaldi, M-A. Nicolet and S. S. Lau, Appl. Phys. Lett. 40, 269 (1982).CrossRefGoogle Scholar
18. Lietoila, A., Wakita, A., Sigmon, T. W. and Gibbons, J. F., J. Appl. Phys. 5, 4399 (1982).CrossRefGoogle Scholar