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Effects of Hydrogen or Nitrogen on Growth of Oxygen-Related Defects in Germanium

Published online by Cambridge University Press:  03 September 2012

Noboru Makihara ,
Kazuyoshi Ito ,
Kaoru Mizuno  and
Kotaro Ono
Noboru Makihara
Affiliation:
Matsue College of Technology, Nishi-ikuma, Matsue, 690, Japan
Kazuyoshi Ito
Affiliation:
Shimane University, Dept. of Physics, N ishi-kawatsu, Matsue, 690 Japan
Kaoru Mizuno
Affiliation:
Shimane University, Dept. of Physics, N ishi-kawatsu, Matsue, 690 Japan
Kotaro Ono
Affiliation:
Shimane University, Dept. of Physics, N ishi-kawatsu, Matsue, 690 Japan
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Abstract

Oxygen-doped germanium crystals were used to demonstrate the interaction between implanted hydrogen or nitrogen atoms and the oxygen-related defects. The electron trap at Eo-0.26eV associated with the germanium A-center was found to be formed by electron irradiation. Another level at Eo-0.21eV also was observed on annealing at 120 °C. As for the sample implanted with hydrogen ions following electron irradiation, the trap concentration is four times as large as that for electron irradiation alone. It is probable that the germanium A-centers produced by electron irradiation capture hydrogen atoms and increase electrically active centers. After nitrogen implantation following electron irradiation, the Eo-0.26eV level almost annealed out at 140 °C and the trap at Eo-0.21eV wasn't observed. We propose that the reduction in the oxygen-related defect growth is due to the prevention of defect migration with nitrogen atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 585
Copyright
Copyright © Materials Research Society 1992

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References

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