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Effects of High Energy Ion Irradiation on Crystallization of Amorphous Germanium Films Deposited on Calcium Fluoride Substrates

Published online by Cambridge University Press:  21 February 2011

Setsuo Nakao ,
Kazuo Saitoh ,
Masami Ikeyama ,
Hiroaki Niwa ,
Seita Tanemura ,
Yoshiko Miyagawa  and
Soji Miyagawa
Setsuo Nakao
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Kazuo Saitoh
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Masami Ikeyama
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Hiroaki Niwa
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Seita Tanemura
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Yoshiko Miyagawa
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
Soji Miyagawa
Affiliation:
National Industrial Research Institute of Nagoya, 1-1, Hirale-cho. Kita-ku, Nagoya 462, Japan, [email protected]
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Abstract

Amorphous (a-) Ge films were deposited on air-cleaved CaF2 (111) substrates at different deposition temperatures (Td). The films were irradiated with 0.9 MeV Ge or Si ions at low ion current intensity (1c) l00nA/cm2. Their structural changes were studied by Rutherford backscattering spectrometry (RBS) -channeling technique and thin film x-ray diffraction (XRD) measurement. It was found that the films were epitaxially crystallized by Ge and Si ion irradiation although they included randomly oriented grains. Ge ion irradiation was more effective for the crystallization than Si ion irradiation. However, the amount of the randomly oriented grains was slightly higher when using Ge ions. On the other hand, ion irradiation to the films prepared at high Td also exhibited higher incidence of randomly oriented grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 191
Copyright
Copyright © Materials Research Society 1996

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