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Effects of He-irradiation on the Metal-to-insulator Transition of Vanadium Dioxide Nanoclusters

Published online by Cambridge University Press:  01 February 2011

Helmut Karl ,
Jing Peng  and
Bernd Stritzker
Helmut Karl
Affiliation:
[email protected], University of Augsburg, Physics Department, Universitaetsstr. 1, Augsburg, D-86135, Germany
Jing Peng
Affiliation:
[email protected], University Augsburg, Physics Department, Augsburg, Germany
Bernd Stritzker
Affiliation:
[email protected], University Augsburg, Physics Department, Augsburg, Germany
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Abstract

In this work nanoclusters of vanadium dioxide (VO2) buried in 200 nm thick SiO2 on silicon have been irradiated with increasing fluences of He ions. The projected range of He was chosen to be 650 nm in order to avoid residual He in the VO2 nanoclusters and the surrounding SiO2. The VO2 nanoclusters have been synthesized by sequential ion implantation of the elements vanadium and oxygen followed by a rapid thermal annealing step. Irradiation with He ions leads to the generation of reversible lattice point defects in the nanocrystalline VO2 precipitates. Simultaneously there is no electronic doping by He incorporation. The effect of the local- and long-range structural disorder on the metal-to-insulator phase transition has been investigated as a function of He fluence by μ-Raman spectroscopy and temperature dependent spectral ellipsometry. The disappearance of a low-frequency Raman mode indicates increasing disorder in the long-range crystal structure due to He irradiation. At the same time the thermal hysteresis of the metal-to-insulator transition narrows.

Keywords

metal-insulator transitionion-implantationRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1256: Symposium N – Functional Oxide Nanostructures and Heterostructures , 2010 , 1256-N11-62
Copyright
Copyright © Materials Research Society 2010

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