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Published online by Cambridge University Press: 26 February 2011
We have studied, using DLTS, the EL-2 concentration in unintentionally doped OMVPE n-GaAs as a function of growth conditions such as partial pressure of Arsine, Trimethylgallium and growth temperature. The partial pressure dependencies are used to develop a model for the formation of EL-2 in the OMVPE process. The EL-2 concentration also shows a near inverse dependence on growth temperature.