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Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs

Published online by Cambridge University Press:  26 February 2011

R. Venkatasubramanian ,
W. I. Lee ,
S. K. Ghandhi  and
J. M. Borrego
R. Venkatasubramanian
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
W. I. Lee
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
S. K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
J. M. Borrego
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
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Abstract

We have studied, using DLTS, the EL-2 concentration in unintentionally doped OMVPE n-GaAs as a function of growth conditions such as partial pressure of Arsine, Trimethylgallium and growth temperature. The partial pressure dependencies are used to develop a model for the formation of EL-2 in the OMVPE process. The EL-2 concentration also shows a near inverse dependence on growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 397
Copyright
Copyright © Materials Research Society 1988

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References

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