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Effects of Grain Boundaries on Performance of Hydrogenated Nanocrystalline Silicon Solar Cells

Published online by Cambridge University Press:  01 February 2011

Tining Su
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
David Bobela
Affiliation:
[email protected], National Renewable Energy Lab, Golden, Colorado, United States
Xixiang Xu
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Scott Ehlert
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Dave Beglau
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Guozhen Yue
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Arindam Banerjee
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Jeff Yang
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Subhendu Guha
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
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Abstract

We investigate the effect of hydrogenation of grain boundaries on the performance of solar cells for hydrogenated nanocrystalline silicon (nc-Si:H) thin films. Using hydrogen effusion, we found that the amplitude of the lower temperature peak in the H-effusion spectra is strongly correlated to the open-circuit voltage in solar cells. This is attributed to the hydrogenation of grain boundaries in the nc-Si:H films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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