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Effects of Excimer Laser Irradiation on the Characteristics of a-Si:H TFT's

Published online by Cambridge University Press:  01 January 1993

S.K. Lee ,
C.H. Oh ,
Y.S. Kim ,
J.S. Park  and
M.K. Han
S.K. Lee
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-Dong,,Kwanak-Ku,Seoul 151-742, Korea
C.H. Oh
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-Dong,,Kwanak-Ku,Seoul 151-742, Korea
Y.S. Kim
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-Dong,,Kwanak-Ku,Seoul 151-742, Korea
J.S. Park
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-Dong,,Kwanak-Ku,Seoul 151-742, Korea
M.K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-Dong,,Kwanak-Ku,Seoul 151-742, Korea
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Abstract

We have investigated the annealing effects of ultraviolet (UV) irradiation on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin films and hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) using XeCl excimer laser. The pulse duration of laser was 30nsec/shot and its intensity was varied from 10mJ/cm2 to 80 mJ/cm2 . By irradiating the excimer laser on the a-Si:H TFT's degraded by the electrical stress and/or the visible light illumination, the characteristics of TFT's, such as the on- current, threshold voltage, field-effect mobility and subthreshold sharpness, have been effectively restored to those of virgin sample, while the leakage current changed little. It should be noted that the a-Si:H channel layer was not crystallized by varying the laser intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 919
Copyright
Copyright © Materials Research Society 1993

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References

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