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Effects of Excess Pb on Crystallization and Electrical Properties of Ferroelectric PZT Films Deposited by Reactive RF Magnetron Sputtering

Published online by Cambridge University Press:  15 February 2011

S.D. Bernstein ,
T.Y. Wong ,
S.R. Collins ,
Yanina Kisler  and
R.W. Tustison
S.D. Bernstein
Affiliation:
Raytheon Research Division, Lexington, MA.
T.Y. Wong
Affiliation:
Raytheon Research Division, Lexington, MA.
S.R. Collins
Affiliation:
Raytheon Research Division, Lexington, MA.
Yanina Kisler
Affiliation:
Raytheon Research Division, Lexington, MA.
R.W. Tustison
Affiliation:
Raytheon Research Division, Lexington, MA.
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Abstract

Films were deposited onto unheated, Ti/Pt coated Si substrates by reactive sputtering in an argon-oxygen atmosphere from a sintered PZT target, and subsequently crystallized at temperatures between 550 and 650 °C. Pt/PZT/Pt capacitors were formed by ion beam sputtering of top electrodes through a shadow mask. Electrical properties were found to depend on gas pressure during deposition. This effect is interpreted in terms of variations in film stoichiometry (particularly Pb content). Films with large excesses of Pb were found to exhibit high leakage currents and poor ferroelectric behavior, whereas films with lower excesses of Pb had low leakage currents, and good ferroelectric properties. Films with the largest Pb excess had a random orientation, while the film with the lowest Pb excess had a preferred (111) orientation. With 550 °C crystallization temperatures the films consist of a mixture of ferroelectric perovskite phase and either PZT pyrochlore or PbO. At higher crystallization temperatures no pyrochlore is detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 477
Copyright
Copyright © Materials Research Society 1995

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References

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