Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T07:27:56.091Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Electron Beam Exposure on Poly(Arylene Ether) Dielectric Films

Published online by Cambridge University Press:  15 February 2011

J. S. Drage ,
J. J. Yang ,
D. K. Choi ,
R. Katsanes ,
K. S. Y. Lau ,
S.-Q. Wang ,
L. Forester ,
P. E. Schilling  and
M. Ross
J. S. Drage
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
J. J. Yang
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
D. K. Choi
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
R. Katsanes
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
K. S. Y. Lau
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
S.-Q. Wang
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
L. Forester
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
P. E. Schilling
Affiliation:
AlliedSignal Inc.-Advanced Microelectronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089
M. Ross
Affiliation:
AlliedSignal Inc.-Electron Vision, 9919 Via Pasar, San Diego, CA 92126
Get access

Abstract

This paper presents a study of the effects of electron beam (e-beam) exposure on the chemical and physical properties of FLARE™ 1.0X, a non-fluorinated member of the FLARE™ family of poly(arylene ether) dielectric coatings. Spin-coated films of this poly(arylene ether) were cured by large-area e-beam exposure, as well as by conventional thermal processing. Neither swelling nor dissolution was observed for the e-beam cured films after immersion in N-methylpyrrolidone (NMP) at 90 °C for 1 hour. The glass transition temperature (Tg) for films cured with a low e-beam dose is slightly higher than, or nearly the same as, the (Tg) for thermally-cured films (∼ 270 °C). However, the Tg for films cured with a high e-beam dose exceeds 400 °C. Dielectric constants of e-beam cured films and thermally cured films are nearly the same. FTIR spectra of FLARE™ films obtained before and after e-beam exposure suggest that e-beam curing does not induce any significant change in the chemical structure. Increased solvent resistance, higher Tg, and low dielectric constant are properties that make this e-beam cured poly(arylene ether) film an excellent candidate for interlevel dielectric integration processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 121
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Edelstein, D. C., Sai-Halasz, G. A., and Mii, Y.-J., IBM J. Res. Develop., 39, 383 (1995).Google Scholar
2. Hacker, N. P., Drage, J. S., Katasanes, R. and Sebahar, P., in Proceedings of the 12th International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, (1995) pp. 138–140.Google Scholar
3. Lau, K. S. Y., Hendricks, N. H., Smith, A. R., and Wan, W. B., in Proceedings of the 12th International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, (1995) pp. 126–128.Google Scholar
4. Forester, L., Cleeves, M., Ramkumar, K., Choi, D. K., Ross, M., and Livesay, W. R., in Proceedings of the 12th International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, (1995) pp. 83–89.Google Scholar
5. Forester, L., Kim, S. B., Choi, D. K., Ko, J. H., Kim, J. C., Ross, M., Livesay, W. R., and Yang, J. J., Proceedings of the 13th International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, (1996) pp. 119–121.Google Scholar
6. Yang, J. J., Choi, D. K., Forester, L. and Ross, M., in Proceedings of Advanced Metalization an Interconnect System for ULSI Application in 1996, ed. by Havemann, R., et al. , MRS, (1997) pp. 505–509.Google Scholar
7. Yang, J. J., Choi, D. K., Forester, L., Ross, M. and Wang, S. Q., in Proceedings of the 3rd International Dielectric for ULSI Multilevel Interconnection Conference (DUMIC), Santa Clara, (1997) pp. 397–400.Google Scholar
8. Mercer, F. W. and Sovich, R., U.S. Patent Nos. 5,114,780 and 5,115,082 (assigned to AlliedSignal Inc.).Google Scholar
9. Livesay, W. R., J. Vac. Sci. Technol., B11, 2304 (1993).Google Scholar