Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T19:38:54.809Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Electrode Spacing on Reactive Ion Etching of 4H-SiC

Published online by Cambridge University Press:  15 March 2011

Janna R. Bonds ,
Geoff E. Carter ,
Jeffrey B. Casady  and
James D. Scofield
Janna R. Bonds
Affiliation:
Electrical & Computer Engineering Department, Mississippi State University, MS 39762-9571, U.S.A.
Geoff E. Carter
Affiliation:
Electrical & Computer Engineering Department, Mississippi State University, MS 39762-9571, U.S.A.
Jeffrey B. Casady
Affiliation:
Electrical & Computer Engineering Department, Mississippi State University, MS 39762-9571, U.S.A.
James D. Scofield
Affiliation:
U.S.A.F. Research Laboratory, Wright-Patterson AFB, OH 45433, U.S.A.
Get access

Abstract

4H-SiC was selectively etched in a Reactive Ion Etch (RIE) system using a nickel mask. The power, pressure, and electrode spacing were varied within a RF generated SF6:O2 (1:2) plasma. Peak etch rates of up to 2600 Aring;/min. were obtained at a pressure of 350 mT, power of 90 W (2 W/cm2), and electrode spacing of 3.180 cm. Etches were all residue-free, although power levels above 60 W (1.36 W/cm2) resulted in the SiC surface being roughened, which limited smooth surface etch capability to 2000 Aring;/min. When comparing electrode spacing from 3.180 cm to 1.270 cm, the 3.180 cm spacing was found to have the highest etch rate at pressures ranging from 250 mT to 500 mT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T8.8.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moore, K.E., Weitzel, C.E., Nordquist, K.J., Pond, L.L., Palmour, J.W., Allen, S., and Carter, C.H., “4H-SiC MESFET's with 65.7% Power Added Efficiency at 850 MHz,” IEEE Electron Dev. Lett., Vol. 18, No. 2, p. 69, (1997).Google Scholar
2. Casady, J.B., A.K Agarwal, Seshadri, S., Siergiej, R.R., Rowland, L.B., MacMillan, M.F., Sheridan, D.C., Sanger, P.A., and Brandt, C.D., “H-SiC power devices for use in power electronic motor control,” Solid-State Electronics, Vol. 42, No. 12, pp. 2165–2176, (1998).Google Scholar
3. Agarwal, A.K., Seshadri, S., MacMillan, M., Mani, S.S., Casady, J., Sanger, P.A., and Shah, P., “4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications,” Solid-State Electronics, Vol. 44, pp. 303–308, (2000).Google Scholar
4. Sheridan, D.C., Casady, J.B., Ellis, C.E., Siergiej, R.R., Cressler, J.D., Strong, R.M., Urban, W.M., Valek, W.F., Seiler, C.F., Buhay, H., “Demonstration of Deep (80[.mu]m) RIE Etching of SiC for MEMS and MMIC Applications,” Proceedings of Int'l. Conf. On SiC and Related Mat., Oct. 10-15, 1999, Research Triangle, NC (USA), in press.Google Scholar
5. Leerungnawarat, P., Hays, D.C., Cho, H., Pearton, S.J., Strong, R.M., Zetterling, C.-M., and Östling, M., “Via-hole etching for SiC,” J. of Vac. Sci. & Tech. B, Vol. 17, pp. 2050–2054, (1999).Google Scholar
6. Cho, H., Leerungnawarat, P., Hays, D.C., Pearton, S.J., Chu, S.N.G., Strong, R.M., Zetterling, C.-M., Östling, M., and Ren, F., “Ultradeep, low-damage dry etching of SiC,” Appl. Phys. Lett., Vol. 76, pp. 739–741, 7 Feb. 2000.Google Scholar
7. Scofield, J. D., Bletzinger, P., and Ganguly, B.N., “Oxygen-free dry etching of -SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge,” Applied Phys. Lett., Vol. 73, pp. 76–78, 6 July 1998.Google Scholar
8. Casady, J. B., Mani, S. S., Siergiej, R.R., Urban, W., Balakrishna, V., Sanger, P.A., and Brandt, C.D., “Surface Roughness of Reactive Ion Etched 4H-SiC in SF6/O2 and CHF3/H2/O2Plasmas,” J. Electrochem. Soc., Vol. 145, No. 4, pp. L58–L60, (1998).Google Scholar