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Effects of Electrically Active Impurities on the Epitaxial Regrowth Rate of Amorphized Silicon and Germanium
Published online by Cambridge University Press: 15 February 2011
Extract
The influence of electrically active n-type (75As) and p-type (11B) impurities on the solid phase epitaxial regrowth of ion-implanted amorphized Si<100> and Ge<100> has been studied for low temperature furnace annealing. Both types of impurity increase the rate of regrowth of both silicon and germanium at a concentration level of 1020 cm−3 . Above this level, 75As retards regrowth in germanium. In compensated surface layers, the regrowth rate slows down to the values observed in self-implanted or intrinsic crystals for both silicon and germanium. The results can be qualitatively explained in terms of electrically induced generation of point defects at the amorphous-crystalline interface.
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