Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:57:09.875Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Dry Etching and Hydrogen Passivation on Transport Properties and Photoluminescence of GaAs/AlGaAs Heterostructures

Published online by Cambridge University Press:  21 February 2011

I. Maximov ,
H. Linke ,
P. Emanuelsson ,
D. Hessman ,
Wang Qin ,
B. K. Meyer ,
L. Samuelson  and
P. Omling
I. Maximov
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
H. Linke
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
P. Emanuelsson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
D. Hessman
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
Wang Qin
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
B. K. Meyer
Affiliation:
Physikdepartment El6, Technical University of Munich, D-85747 Garching, Federal Republic of Germany
L. Samuelson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
P. Omling
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
Get access

Abstract

We present an investigation of electron cyclotron resonance plasma etching induced damage of the 2-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures using low temperature photoluminescence (PL), electron paramagnetic resonance (EPR) and the Shubnikov-de Haas (SdH) effect. Dry etching of half of the 20 nm top layer of GaAs results in a decrease of the single-particle relaxation time by 20 - 50%, while the concentration of a surface-related paramagnetic defect increases by about one order of magnitude. At the same time, the PL intensity decreases by a factor of 5 - 10. Plasma hydrogenation experiments, annealing and wet etching experiments have been carried out, and the different characterization results are related to each other. We find that passivation in a hydrogen plasma, which leads to a strong increase of the PL intensity of etched as well as unetched samples, causes damage to the transport properties of the 2DEG. The defect concentration is not related in a simple way to the changes of optical and transport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 85
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Cameron, N. I., Beaumont, S. P., Wilkinson, C. D. W., Johnson, N. P., Kean, A. H., Stanley, C. R., Vac, J.. Sci. Technol. B8, 1966 (1990)Google Scholar
2 Constantine, C., Johnson, D., Pearton, S. J., Chakrabarti, U. K., Emerson, A. B., Hobson, W. S., Kinsella, A. P., Vac, J.. Sci. Technol. B8, 596 (1990)Google Scholar
3 Pearton, S. J., Mater. Sci. Engin. B10, 187 (1991)Google Scholar
4 As, D. J., Frey, Th., Jantz, W., Kaufel, G., Köhler, K., Rothemund, W., Schweizer, Th. and Zappe, H. P., J. Electronic Materials 19, 747 (1990)Google Scholar
5 Ide, Y., Kohmoto, S., and Asakawa, K., J. Electronic Materials 21, 3 (1992)Google Scholar
6 Joseph, M., Guimaraes, F. E. G., Kraus, J., Tegude, F.-J., Vac, J.. Sci. Technol. B9, 1456 (1991)Google Scholar
7 Shapoval, S., Bulkin, P., Chumakov, A., Khudobin, S., Maximov, I., and Mikhailov, G., Vacuum 43, 195 (1992)Google Scholar
8 Maximov, I., Gustafsson, A., Hansson, H.-C., Samuelson, L., Seifert, W., and A.Wiedensohler, , Vac, J.. Sci. Technol. A11, 748 (1993)Google Scholar
9 Guggina, W. H., Ballegeer, D. G., Adesida, I., Nucl. Instr. and Meth. in Phys. Res. B59/60, 1011(1991)Google Scholar
10 Linke, H., Omling, P., Ramvall, P., Meyer, B. K., Drechsler, M., Wetzel, C., Rudeloff, R., Scholz, F., J. Appl. Phys. 73, 7533 (1993)Google Scholar
11 Das Sarma, S. and Stern, F., Phys. Rev. B 32, 8442 (1985)Google Scholar
12 Bergmann, J. P., Zhao, Q. X., Holtz, P. O., Monemar, B., Sundaram, M., Merz, J. L., Gossard, A. C., Phys. Rev. B 43, 4774 (1991)Google Scholar