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Effects of Dry Etching and Hydrogen Passivation on Transport Properties and Photoluminescence of GaAs/AlGaAs Heterostructures

Published online by Cambridge University Press:  21 February 2011

I. Maximov ,
H. Linke ,
P. Emanuelsson ,
D. Hessman ,
Wang Qin ,
B. K. Meyer ,
L. Samuelson  and
P. Omling
I. Maximov
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
H. Linke
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
P. Emanuelsson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
D. Hessman
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
Wang Qin
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
B. K. Meyer
Affiliation:
Physikdepartment El6, Technical University of Munich, D-85747 Garching, Federal Republic of Germany
L. Samuelson
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
P. Omling
Affiliation:
Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
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Abstract

We present an investigation of electron cyclotron resonance plasma etching induced damage of the 2-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures using low temperature photoluminescence (PL), electron paramagnetic resonance (EPR) and the Shubnikov-de Haas (SdH) effect. Dry etching of half of the 20 nm top layer of GaAs results in a decrease of the single-particle relaxation time by 20 - 50%, while the concentration of a surface-related paramagnetic defect increases by about one order of magnitude. At the same time, the PL intensity decreases by a factor of 5 - 10. Plasma hydrogenation experiments, annealing and wet etching experiments have been carried out, and the different characterization results are related to each other. We find that passivation in a hydrogen plasma, which leads to a strong increase of the PL intensity of etched as well as unetched samples, causes damage to the transport properties of the 2DEG. The defect concentration is not related in a simple way to the changes of optical and transport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 85
Copyright
Copyright © Materials Research Society 1994

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