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Effects of Dielectric Thermal Expansion and Elastic Modulus on the Stress and Deformation Fields in Copper Interconnects

Published online by Cambridge University Press:  01 February 2011

Yu-Lin Shen
Yu-Lin Shen*
Affiliation:
[email protected], University of New Mexico, Mechanical Engineering, MSC 01 1150, Albuquerque, NM, 87131, United States
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Abstract

This study aims at assessing the role played by the coefficient of thermal expansion (CTE) and elastic modulus of low-k dielectric, in affecting the stress and deformation fields in copper interconnects. Parametric finite element analyses are conducted, varying one parameter at a time, for gaining fundamental understanding of the effect of individual properties. The analyses are based on a three dimensional model containing two levels of metal lines connected by a via. It is found that both the high CTE and low modulus values of the polymer-based dielectric contribute to the evolution of stress/strain fields in the metal structure. The low-k CTE plays a more significant role. Within certain limits, decreasing the low-k CTE and/or increasing the low-k modulus can help alleviate the plastic deformation, and thus the propensity of damage initiation, in the metal. Reducing the low-k CTE will be a more efficient and safer approach.

Keywords

microelectronicsthermal stressessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-10
Copyright
Copyright © Materials Research Society 2006

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References

1 Zhao, J.-H., Qi, W.-J., and Ho, P. S., Microelectron. Reliab. 42, 27 (2002).Google Scholar
2 Shen, Y.-L. and Ramamurty, U., J. Vac. Sci. Technol. B 21, 1258 (2003).Google Scholar
3 Ege, E. S. and Shen, Y.-L., J. Electronic Mater. 32, 1000 (2003).Google Scholar
4 Paik, J.-M., Park, H. and Joo, Y.-C., Microelectron. Engng. 71, 348 (2004).Google Scholar
5 Shen, Y.-L., J. Electronic Mater. 34, 497 (2005).Google Scholar
6 Rhee, S.-H., Du, Y., Ho, P. S., J. Appl. Phys. 93, 3926 (2003).Google Scholar
7 ABAQUS, Version 6.4, Abaqus, Inc., Providence, Rhode Island.Google Scholar
8 Web site: www.dow.com/silk/lit/index.htm, The Dow Chemical Company.Google Scholar
9 Fayolle, M., Passemard, G., Assous, M., Louis, D., Beverina, A., Gobil, Y., Cluzel, J., Arnaud, L., Microelectron. Engng. 60, 119 (2002).Google Scholar
10 Shaw, T. M., Liu, X.-H., Murray, C., Wisniewski, M. Y., Fiorenza, G., Lane, M., Chiras, S., Rosenberg, R. R., Filippi, R., Mcgrath, J., Rathore, H. and Mcgahay, V., presentation U9.1, 2003 MRS Fall Meeting, Boston, MA.Google Scholar