Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:44:31.638Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Deposition Temperature and Thermal Treatment on the Structure of C60 and C70 Films

Published online by Cambridge University Press:  22 February 2011

I. Rusakova ,
A. Hamed  and
P.H. Hor
I. Rusakova
Affiliation:
Department of Physics and Texas Center for Superconductivity University of Houston, Houston, TX 77204-5932
A. Hamed
Affiliation:
Department of Physics and Texas Center for Superconductivity University of Houston, Houston, TX 77204-5932
P.H. Hor
Affiliation:
Department of Physics and Texas Center for Superconductivity University of Houston, Houston, TX 77204-5932
Get access

Abstract

C60 and C70 polycrystalline thin films, prepared by sublimation of powders onto carbon holey film substrates held at temperatures Ts of 40 and 200 °C, were investigated at room temperature using conventional and high resolution TEM. A strong dependence of grain size on Ts is observed. We obtain a mean grain size ˜25 nm for both C60 and C70 films when using Ts = 40 °C, but this size is ˜250 nm for C60 and ˜130 nm for C70 when using Ts = 200 °C. In all cases, however, an fc.c. structure with a high density of planar defecTs, twins and stacking faulTs, is observed. When a C60 film grown at Ts = 40 °C was annealed for several hours at only about 250 °C in vacuum, recrystallization took place, with grains as large as 250 nm now being present in the film. A condition to observe this recrystallization seems to be that the powder used to grow the film must be dried for long enough periods of time to minimize the amount of solvent residues.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 101
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tendeloo, G. Van, Beeck, M.O. de, Amelinckx, S., Bohr, J., and Kratschmer, W., Europhysics Lett. 15, 295 (1991).Google Scholar
2. Krakow, W., Rivera, N.M., Roy, R. A., and Cuomo, J.J., in Proc. of the 50th Annual Meeting of the Electron Microscopy Society of America, edited by Bailey, G.W., Bentley, J., and Small, J.A. (San Francisco Press, San Francisco, 1992), p. 108.Google Scholar
3. Tendeloo, G. Van, Amelinckx, S., Muto, S., Verheijen, M.A.. Loosdrecht, P.H.M. van, and Meijer, G., Ultramicroscopy 51, 168 (1993).Google Scholar
4. Saito, Y., Suzuki, N., Shinohara, H., and Ando, Y., J. of Applied Physics 30, 2857 (1991).Google Scholar
5. Saito, Y., Suzuki, N., Shinohara, H., Hayashi, T., and Tomita, M., Ultramicroscopy 41, 1 (1992).Google Scholar
6. Tendeloo, G. Van, Heurck, C. Van, Landuyt, J. Van, Amelinckx, S., Verheijen, M.A., Loosdrecht, P.H.M. van, and Meijer, G., Journal of Physical Chemistry 96, 7424 (1992).Google Scholar
7. Zhou, W.L., Zhao, W., Fung, K.K., Chen, L.Q., and Zhang, Z.B., Physica C 214, 19 (1993).Google Scholar
8. Wilson, R.J., Meijer, G., Bethune, D.S., Johnson, R.D., Chambliss, D.D., Vries, M.S., Hunziker, H.E., and Wendt, H.R., Nature 348, 621 (1990).Google Scholar
9. Rusakova, I., Hamed, A., and Hor, P.H., submitted to J. of Mat. Res.Google Scholar
10. Dravid, V.P., Liu, S. and Kappes, M.M., Chem. Phys. Lett. 185, 75 (1991)Google Scholar
11. Zhao, W.B., Zhang, X.D., Ye, Z.Y., Zhang, J.L., Li, C.Y., Yin, D.L., Gu, Z.N., Zhou, X.H., and Jin, Z.X., Sol. State Comm. 85, 311 (1993).Google Scholar
12. Li, Y.Z., Patrin, J.C., Chander, M., Weaver, J.H., Chibante, L.P.F., Smalley, R.E., Science 252, 547 (1991).Google Scholar
13. Fischer, J.E., Heyney, P.A., McGhie, A.R., Romanow, W.J., Denenstein, A.M., McCauley, J.P. Jr., and Smith, A.B. III, Science, 252, 1288 (1991).Google Scholar