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Effects of Deposition Temperature and Film Thickness on the Structural, Electrical, and Optical Properties of Germanium Thin Films

Published online by Cambridge University Press:  01 February 2011

William B. Jordan  and
Sigurd Wagner
William B. Jordan
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

Germanium films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen grow in the structure succession of amorphous-nanocrystallineamorphous-nanocrystalline as the substrate temperature is raised from 30°C to 310°C. We ascribe the phase formation, from low to high temperature, to a sequence of low to high mobility of Ge growth species on a surface that is hydrogenated at low temperature but not hydrogenated at high temperature. We report some structural, optical, and electrical transport properties of Ge films as a function of deposition temperature and film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A18.2
Copyright
Copyright © Materials Research Society 2002

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