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Effects of Defects in GaAs/AlGaAs Quantum Wells

Published online by Cambridge University Press:  22 February 2011

O.L. Russo ,
V. Rehn ,
T.W. Nee  and
K.A. Dumas
O.L. Russo
Affiliation:
New Jersey Institute of Technology, Department of Physics, Newark, NJ 07102
V. Rehn
Affiliation:
Naval Air Warfare Center, Michelson Laboratory, China Lake, CA. 93555
T.W. Nee
Affiliation:
Naval Air Warfare Center, Michelson Laboratory, China Lake, CA. 93555
K.A. Dumas
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA. 91109
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Abstract

High Resolution transmission electron microscopy (HRTEM) and electroreflectance (ER) were used to explain the role of point defects in the molecular beam epitaxy (MBE) grown PIN structure containing five coupled (50Å/28Å) GaAs/AlxGa1−xAs quantum wells with x = 0.25. The ER data were taken at 300K and 77K for energies from 1.4 to 2.1 eV from which sub-band energy transitions were determined. Data at 300K showed three transitions whereas four were readily resolved at 77K. HRTEM data determined the uniformity of both the wells and barriers to be within ± 2Å, which neither caused appreciable broadening nor a decrease in the transition probability. However, the data at different temperatures suggest that point defects may be responsible for the decrease in the transition probability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 43
Copyright
Copyright © Materials Research Society 1994

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