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Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs

Published online by Cambridge University Press:  15 February 2011

D. K. Sadana ,
J. Washburn ,
M. D. Strathman ,
G. R. Booker  and
M. H. Badawi
D. K. Sadana
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
M. D. Strathman
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
G. R. Booker
Affiliation:
Department of Metallurgy, University of Oxford, Oxford, England
M. H. Badawi
Affiliation:
Department of Electronics and Electrical Engineering, University of Surrey, Guildford, Surrey, England
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Abstract

Interaction of impurities with the “visible defects” in hot implanted Cr doped semi-insulating (100) GaAs has been investigated. The defects studies were performed using transmission electron microscopy (TEM) and MeV He+ channeled Rutherford backscattering. The defects distribution was obtained by 90° cross-sectional TEM (XTEM). The atomic concentration profiles of Se, and carrier-concentration and mobility profiles were obtained by secondary ion mass spectrometry (SIMS) and Hall measurements in conjunction with chemical stopping, respectively. Comparison of defects, atomic and electrical profiles, showed the formation of secondary defects at and beyond the projected range (Rp), a significant amount of Se+ diffusion beyond Rp, and compensation of electrical carriers caused mainly by the point defects present in hot implanted GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 515
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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