Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-05T05:39:10.783Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Capless Face-to-Face Annealing Temperature and Time on the Properties of Silicon Implanted Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

Oded Paz
Oded Paz*
Affiliation:
International Business Machine Corporation, East-Fishkill Laboratories, Route 52, Hopewell Junction, New York 12533
Get access

Abstract

Maintaining As overpressure during capless post-implantation annealing through the use of the face-to-face proximity configuration has proved to be a reproducible technique with less process parameters to control than the alternative techniques of capped or arsine annealing. An investigation of carrier mobility and dopant activation as a function of annealing temperature resulted in an optimum annealing temperature of 840 °C with activation improving for 9 min heat-up time as compared to a 14 min heat-up time. An increase in activation with anneal time during isothermal annealing was also observed. Dopant redistribution during annealing was modeled with an experimentally derived diffusion coefficient of 2×10−14 cm2/sec. This value is close to the diffusion coefficient published for capped annealing. Dopant redistribution in the near-surface (1000 Å) region was verified using SIMS. Based on presently available data there is no evidence for similar dopant redistribution during capless arsine annealing and this redistribution probably occurs whenever excess vacancy generation/redistribution is taking place, as during capped annealing and during proximity annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 385
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Immorlica, A.A. and Eisen, F.H., Appl. Phys. Lett. 29, 94(1976).Google Scholar
2. Clarke, R.C. and Eldridge, G.W., IEEE Trans. Electron Devices, ED–31, 1077 (1984).Google Scholar
3. Bhat, R., Baliga, B.J. and Ghandhi, S.K., J. Electrochem. Soc., 122, 1378(1975).CrossRefGoogle Scholar
4. Kasahara, J., Arai, M., and Watanabe, N., J. Appl. Phys., 50, 541(1979).CrossRefGoogle Scholar
5. Egawa, T., Sano, Y., Nakamura, H., Ishida, T., and Kaminishi, K., Jpn. J. Appl. Phys. 24, L35(1985).Google Scholar
6. Woodall, J.M., Rupprecht, H., Chicotka, R.J., and Wicks, G., Appl. Phys. Lett., 38, 639(1981).Google Scholar
7. Pande, K.P., Aina, O.A., Lakhani, A.A., Nair, V.K.R., and O'connor, J.M., IEEE Tran. Electron Devices, ED–31,506(1984).Google Scholar
8. Kang, C.H., Korido, K., Lagowski, J., and Gatos, H.C., J. Electrochem. Soc., 134, 1261(1987).Google Scholar
9. Hayd, W.H., IEEE Electron Device Lett., EDL–5, 78(1984).Google Scholar
10. Badawi, M.H. and Mun, J., Electron Lett., 20, 125(1984).Google Scholar
11. Armiento, C.A., Lehman, L.L., Prince, F.C. and Zemon, S., J. Elcctrochem. Soc., 134, 2010(1987).Google Scholar
12. Kohzu, H., Kuzuhara, M., and Takayama, Y., J. Appl. Phys., 54, 4998(1983).Google Scholar
13. Kanbcr, H., Cipolli, R.J., Henderson, W.B. and Whelan, J.M., J. Appl. Phys., 57, 4732(1985).CrossRefGoogle Scholar
14. Albert, M., Webb, D. and Jackson, T., IBM, private communication.Google Scholar
15. Naik, I.K., J. Electrochem. Soc., 134, 1270(1987).CrossRefGoogle Scholar
16. Stolte, C.A. in “Semiconductors and Semimetals”, edited by Willardson, R.K. and Beer, A.C., p. 125, Academic Press Inc., London(1984).Google Scholar
17. Seidel, T.E. and MacRae, A.U., trans. of the Metall. Soc. of AIME, 245, 491(1969).Google Scholar
18. Ziegler, J.F., Biersack, J.P., and Littmark, U., “The Stopping and Range of Ions in Matter”, Pergamon Press, New York(1985).Google Scholar
19. Christel, L.A. and Gibbons, J.F., J. Appl. Phys. 52, 5050(1981).CrossRefGoogle Scholar
20. Kasahara, J., Arai, M., and Watanabe, N., J. Electrochem. Soc., 126, 1997(1979).Google Scholar