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Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Han Wook Song ,
Joon Sung Lee ,
Dae-Weon Kim ,
Kwang Ho Kim ,
Tae-Hyun Sung  and
Kwangsoo No
Han Wook Song
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yu Sung-gu, Taejeon, 305-701, Korea
Joon Sung Lee
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yu Sung-gu, Taejeon, 305-701, Korea
Dae-Weon Kim
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yu Sung-gu, Taejeon, 305-701, Korea
Kwang Ho Kim
Affiliation:
Dept. of Semiconductor Engineering, Cheong Ju University, 36, Naedok-Dong, Cheong Ju, 360-170, Korea
Tae-Hyun Sung
Affiliation:
Center for Advanced Studies in Energy and Environment, Korea Electric Power Research Institute, Taejeon, Korea
Kwangsoo No
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yu Sung-gu, Taejeon, 305-701, Korea
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Abstract

MgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 471
Copyright
Copyright © Materials Research Society 1998

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References

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