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Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon

Published online by Cambridge University Press:  21 February 2011

O. Dokumaci ,
M.E. Law ,
V. Krishnamoorthy  and
K.S. Jones
O. Dokumaci
Affiliation:
Department of Electrical Engineering, University of Florida, 339 Larsen Hall, Gainesville, Florida 32611
M.E. Law
Affiliation:
Department of Electrical Engineering, University of Florida, 339 Larsen Hall, Gainesville, Florida 32611
V. Krishnamoorthy
Affiliation:
Department of Materials Science, University of Florida, Gainesville, Florida 32611
K.S. Jones
Affiliation:
Department of Materials Science, University of Florida, Gainesville, Florida 32611
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Abstract

The enhanced diffusion of boron due to high dose arsenic implantation into silicon is studied as a function of arsenic dose. The behavior of both the type-V and end-of-range loops is investigated by transmission electron microscopy (TEM). The role of arsenic deactivation induced interstitials and type-V loops on enhanced diffusion is assessed. Reduction of the boron diffusivity is observed with increasing arsenic dose at three different temperatures. The possible explanations for this reduction are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 167
Copyright
Copyright © Materials Research Society 1996

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