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Effects of ArF Excimer Irradiation on Multi-Energy Ge and Se Ion Implanted Silica

Published online by Cambridge University Press:  17 March 2011

R. H. Magruder III ,
R. A. Weller ,
R. A. Weeks ,
J. Wehrmeyer ,
R. A. Zuhr  and
D. K. Hensley
R. H. Magruder III
Affiliation:
Dept. of Physics, Belmont University, Nashville, TN 37212
R. A. Weller
Affiliation:
Dept. of Electrical Engineering and Computer Science, Vanderbilt University, Nashville TN 37235
R. A. Weeks
Affiliation:
Dept. of Mechanical Engineering, Vanderbilt University, Nashville TN 37235
J. Wehrmeyer
Affiliation:
Dept. of Mechanical Engineering, Vanderbilt University, Nashville TN 37235
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Silica samples were implanted at multiple energies with Se and Ge ions producing implanted layers ~ 2.4 µm in depth starting at ~ 0.5 µm below the surface. In each case, the concentration of implanted species was ~ 0.05 atomic %. The optical absorption of the samples was measured from 2.7 to 6.5 eV. In all spectra, local maxima at 5.0 eV with shoulders at 5.9 eV were observed. The spectra have been assumed to be describable as a superposition of Gaussian absorption bands with mean energies taken from the literature of 4.8, 5.01, 5.17, 5.88, and 7.15 eV. The relative strengths of each of these bands have been obtained by linear regression. These fits show that additional bands at 3.7 and 6.4 eV are required to fit the data for the Se samples, while bands at 5.54 and 6.4 eV are needed to fit the data for the Ge samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.34
Copyright
Copyright © Materials Research Society 2001

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