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Effects of Annealings on Pt/TiN/Ti Interfacial Reactions

Published online by Cambridge University Press:  15 February 2011

F. Varniere ,
B. Eakim ,
B. Agius ,
R. Bisaro ,
J. Olivier ,
G. Chevrier ,
H. Achard ,
H. Mace  and
L. Peccoud
F. Varniere
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
B. Eakim
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
B. Agius
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
R. Bisaro
Affiliation:
Thomson-CSF LCR, Domaine de Corbeville, 91404 ORSAY CEDEX FRANCE.
J. Olivier
Affiliation:
Thomson-CSF LCR, Domaine de Corbeville, 91404 ORSAY CEDEX FRANCE.
G. Chevrier
Affiliation:
Laboratoire Léon Brillouin (CEA-CNRS), CEN SACLAY, 91190 GIF SUR YVETTE FRANCE
H. Achard
Affiliation:
LETI département de Microélectronique 85X, 38041 GRENOBLE FRANCE.
H. Mace
Affiliation:
LETI département de Microélectronique 85X, 38041 GRENOBLE FRANCE.
L. Peccoud
Affiliation:
LETI département de Microélectronique 85X, 38041 GRENOBLE FRANCE.
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Abstract

The selection of a suitable electrode and barrier layer is important in the integration of lead zirconate titanate (PZT) into memory circuits. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and therefore to formation of poor quality layers.

In this paper we used Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectrometry (AES), and X-ray Diffraction (XRD) to study the effects of annealings on the interdiffusion of Pt/TiN/Ti trilayers deposited on BPSG/Si substrates. The wafers were annealed in Ar, N2 or O2 ambients with temperatures ranging from 550 to 700°C for 60 min, 30 min or 30 sec. Drastic changes occur when the as deposited Pt/TiN/Ti layers on BPSG/Si structures are exposed to classical heat treatment: oxidation induces diffusion of Ti into Pt and oxidation of Ti is also observed. Regardeless of annealing proceedure used, significant improvement in the interdiffusion of Pt, Ti and O have been achieved when the TiN/Ti/BPSG/Si structure was heated up to 450°C in vacuum. Platinum films deposited on such a structure seem to be a promising barrier layer for PZT film elements as there was no indication of Pb diffusion into the underlying layers and furthermore the desired crystal structure was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 235
Copyright
Copyright © Materials Research Society 1995

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References

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