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Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films

Published online by Cambridge University Press:  31 January 2011

David C. Look ,
Kartik Ghosh  and
Kevin Leedy
David C. Look
Affiliation:
[email protected]@wpafb.af.mil, Wright State University, Semiconductor Research Center, Dayton, Ohio, United States
Kartik Ghosh
Affiliation:
[email protected], Missouri State University, Physics, Astronomy and Materials Science, 901 S. National Avenue, Springfield, Missouri, 65897, United States, 417-836-6205, 417-836-6226
Kevin Leedy
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/RYDD, 2241 Avionics Cir, Bldg 620, WAPFB, Ohio, 45433, United States, 9372551874
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Abstract

Temperature-dependent Hall-effect measurements have been performed on three Ga-doped ZnO thin films of various thicknesses (65, 177, and 283 nm), grown by pulsed laser deposition at 400 °C and annealed at 400 °C for 10 min in Ar, N2, or forming-gas (5% H2 in Ar). The donor ND and acceptor NAconcentrations as a function of sample thickness and annealing conditions are determined by a new formalism that involves only ionized-impurity and boundary scattering. Before annealing, the samples are highly compensated, with ND = (2.8 ± 0.3) × 1020 cm-3 and NA = (2.6 ± 0.2) × 1020 cm-3. After annealing in Ar the samples are less compensated, with ND = (3.7 ± 0.1) × 1020 cm-3 and NA = (2.0 ± 0.1) × 1020 cm-3; furthermore, these quantities are nearly independent of thickness. However, after annealing in N2 and forming-gas, ND and NA are thickness dependent, partly due to depth-dependent diffusion of N2 and H, respectively.

Keywords

annealingelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H02-06
Copyright
Copyright © Materials Research Society 2010

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