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Effects of Ambient Gas on the Out-Diffusion of Nickel and Copper through Thin Gold Films

Published online by Cambridge University Press:  22 February 2011

R. K. Lewis ,
S. K. Ray  and
K. Seshan
R. K. Lewis
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
S. K. Ray
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
K. Seshan
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
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Abstract

The low temperature (300–400°C) out-diffusion of an underlying metal through a thin film overlayer of another metal has been studied in ambients of N2 and forming gas. Surface oxidation of this out-diffused metal can interfere with the attachment of terminating components used in semiconductor devices. AES depth profile analysis has shown that the out-diffusion of Ni through Au is suppressed in a forming gas ambient. It has also been shown that the extent of this out diffusion can be modified considerably by the presence of Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 425
Copyright
Copyright © Materials Research Society 1985

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References

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