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Effects of a Post-Emitter RTP on Bipolar NPN Beta Degradation Lifetime for 1.0 Micron & 0.8 Micron BICMOS Processes

Published online by Cambridge University Press:  10 February 2011

W. E. Leitz ,
G. Modi ,
N. Parekh ,
E. Sabin  and
R. V. Taylor
W. E. Leitz
Affiliation:
Silicon Systems, Inc., 2300 Delaware Avenue, Santa Cruz, Ca., 95060
G. Modi
Affiliation:
Silicon Systems, Inc., 2300 Delaware Avenue, Santa Cruz, Ca., 95060
N. Parekh
Affiliation:
Silicon Systems, Inc., 2300 Delaware Avenue, Santa Cruz, Ca., 95060
E. Sabin
Affiliation:
Silicon Systems, Inc., 2300 Delaware Avenue, Santa Cruz, Ca., 95060
R. V. Taylor
Affiliation:
Silicon Systems, Inc., 2300 Delaware Avenue, Santa Cruz, Ca., 95060
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Abstract

Rapid Thermal Processing (RTP) has sometimes been used to increase bipolar NPN Beta (Hfe, or current gain) for a polysilicon emitter BICMOS process. It has been demonstrated that Beta may be increased by 20%, compared to normal non-RTP process values, by the addition of an RTP cycle after the final high temperature furnace step. In our work it was found that emitter-base reverse bias degrades Beta much more severely for a process which uses RTP, than for a non-RTP process. In this paper we will report on the electrical performance effects of RTP on a variety of process parameters. The reliability effects on NPN Beta degradation lifetime, and NMOS reliability effects will be discussed as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 103
Copyright
Copyright © Materials Research Society 1996

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References

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