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Effective Orientation Control of Pb(Zr0.4Ti0.6)O3 Thin Films Using A New Ti/Pb(Zr0.4Ti0.6)O3 Seeding Layer

Published online by Cambridge University Press:  01 February 2011

B. K. Moon ,
O. Arisumi ,
K. Hornik ,
R. Bruchhaus ,
H. Itokawa ,
A. Hilliger ,
H. Zhuang ,
U. Egger ,
K. Nakazawa  and
S. Yamazaki
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B. K. Moon*
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
O. Arisumi
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
K. Hornik
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
R. Bruchhaus
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
H. Itokawa
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
A. Hilliger
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
H. Zhuang
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
U. Egger
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
K. Nakazawa
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
S. Yamazaki
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
T. Ozaki
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
N. Nagel
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
I. Kunishima
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
K. Yamakawa
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Toshiba Corp. Semiconductor Company, Toshiba Yokohama Complex, Shinsugita-cho, Isogo-ku, Yokohama, 235–8522, Japan
G. Beitel
Affiliation:
Infineon-Toshiba FeRAM Development Alliance (FDA), Infineon Technologies A G, Memory Products Div., Balanstr. 73, 81609 Munich, Germany
*
* Infineon Technologies North America Corp., 1983 Route 52, Suite 1, Hopewell Junction, NY 12533, USA (e-mail: [email protected])
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Abstract

The effect of thin Ti/PbZr0.4Ti0.6O3 seed layers on the properties of PbZr0.4Ti0.6O3 (PZT) capacitors has been investigated. The seed layer is based on a bi-layer of thin Ti and thin PZT with a total thickness ranging from 10 to 25 nm, which was deposited on Ir/Pt or Ir/IrO2/Pt by sputtering. After crystallization of the seed layers the main 130-nm-thick PZT film was deposited and crystallized. As a result, a highly preferred (111)-orientation of the PZT was obtained on a 10-nm-thick seed layer, where the peak intensity ratios of (111)/{100} and (111)/{110} are about 100 and 20, respectively. The 10-nm-thick seed forms a pyrochlore phase with a very smooth surface, where the formation of the pyrochlore phase is attributed to Pb diffusion, resulting in a Pb deficient stoichiometry. The seed layer transformed to the perovskite phase during the main PZT crystallization. It is shown that an IrO2 layer beneath the Pt can prevent Pt layer degradation related to the volume expansion due to the oxidation of Ir during the main PZT crystallization. Capacitors with the 10-nm-thick seed layer fabricated on the Ir/Pt and Ir/IrO2/Pt substrates showed typical 2 Pr values of 44.0 μC/cm2 and 41.2 μC/cm2, respectively. The voltage found for 90%-polarization saturation is about 3.0 V, and the capacitors are fatigue-free at least up to 1010 switching cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C7.5
Copyright
Copyright © Materials Research Society 2004

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