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Effective Dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Shinichi Kawamura ,
Manabu Yoshida ,
Satoshi Hoshino  and
Toshihide Kamata
Shinichi Kawamura
Affiliation:
R&D Center, RICOH, 16-1 Shinei-cho, Tsuzuki-ku, Yokohama, 224-0035JAPAN Optoelectronic Industry and Technology Development Association (OITDA), Sekiguchi, Bunkyo-ku, Tokyo 112-0014JAPAN
Manabu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565JAPAN
Satoshi Hoshino
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565JAPAN
Toshihide Kamata
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565JAPAN
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Abstract

The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the Rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I3.18
Copyright
Copyright © Materials Research Society 2005

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