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The Effect of Window Edge Stress on Dopant Diffusion in Silicon

Published online by Cambridge University Press:  25 February 2011

C. K. Huang ,
T. Kook  and
R. J. Jaccodine
C. K. Huang
Affiliation:
Sherman Fairchild Center for Solid State Study, Lehigh University, Bethlehem, PA 18015
T. Kook
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18013
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Study, Lehigh University, Bethlehem, PA 18015
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Abstract

An experimental study of dopant diffusion at Si3N4 and SiO2 film edge is reported. The results show that an alternation of enhanced and retarded diffusion of both As and Sb at the Si3N4/SiO2 film edge was observed after 1100°C heat treatment in N2. The observed effect has been correlated to the alternation of tensile and compressive stress field at the film edge for the first time. Additionally, the different shape of junction profile of As and Sb seems to be a result of impurity misfit strain effect. From this experiment, it is obvious that the interaction of film edge stress fields will make the control of dopant profile more difficult for smaller window width. Hence the film edge effect should be taken into account especially for the fabrication of submicron devices.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 277
Copyright
Copyright © Materials Research Society 1987

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References

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