Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:34:28.108Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

Published online by Cambridge University Press:  10 February 2011

N. Grandjean ,
M. Leroux ,
J. Massies ,
M. Mesrine  and
P. Lorenzini
N. Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
M. Leroux
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
J. Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
M. Mesrine
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
P. Lorenzini
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
Get access

Abstract

Ammonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 69
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S. and Fasol, G., The Blue Laser Diode Springer, Berlin, 1997 Google Scholar
2. Riechert, H., Averbeck, R., Graber, A., Schienle, M., Strauss, U., and Tews, H., Mat. Res. Soc. Symp. Proc. Vol.449, p. 149 (1997)Google Scholar
3. Grandjean, N., Massies, J., Leroux, M., and Lorenzini, P., Appl. Phys. Lett. 72, 82 (1998)Google Scholar
4. Aktas, Ô., Kim, W., Fan, Z., Botchkarev, A., Salvador, A., Mohammad, S. N., Sverdlov, B., and Morkoç, H., Electron. Lett. 31, 1389 (1995)Google Scholar
5. Grandjean, N. and Massies, J., Appl. Phys. Lett. 71, 1816 (1997)Google Scholar
6. Held, R., Grawford, D. E., Johnston, A. M., Dabiran, A. M., and Cohen, P. I., J. Electron. Mater. 26, 272 (1997)Google Scholar
7. Mesrine, M., Grandjean, N., and Massies, J., Appl. Phys. Lett. 72, 350 (1998)Google Scholar
8. Kin, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H., and Morkoç, H., J. Appl. Phys. 82, 219 (1997)Google Scholar
9. Im, Jin Seo, Hollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Mat. Res. Soc. Symp. Proc. Vol.482, *** (1998), to be publishedGoogle Scholar
10. Singh, J., Appl. Phys. Lett. 64,2694 (1994).Google Scholar
11. Bigenwald, P., private communication.Google Scholar