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The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

Published online by Cambridge University Press:  22 February 2011

Frank Baldwin ,
Paul H. Holloway ,
Mark Bordelon  and
Thomas R. Watkins
Frank Baldwin
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Mark Bordelon
Affiliation:
Harris Semiconductor, Melbourne, FL 32901
Thomas R. Watkins
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 233
Copyright
Copyright © Materials Research Society 1994

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References

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