Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:32:01.303Z Has data issue: false hasContentIssue false

The Effect of Tungsten on the Nucleation and Growth of thin Aluminum Alloy Films

Published online by Cambridge University Press:  15 February 2011

Bea CAO
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, Mesa, AZ
N. David Theodore
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, Mesa, AZ
Hank Shin
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, Mesa, AZ
Peter Fejes
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, Mesa, AZ
Les Hendrickson
Affiliation:
Arizona State University, Dept. of Chemical, Bio and Materials Engineering, Tempe, AZ
Get access

Abstract

A variety of alloying elements are currently being investigated for their effects on the mechanical properties and reliability of thin aluminum films. In the present study, scanning electron microscopy and transmission electron microscopy are used to study the nucleation and growth of Al-1.5wt%Cu and Al-1.5wt% Cu-0.2wt% W films. Differences in Microstructure, nucleation and growth behavior are observed and are explained in terms of changes in surface energies and atomic Mobilities.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. AMes, I., d'Heurle, F.M., and Horstmann, R.E., IBM J. Res. Develop. 14–7, 461 (1970).Google Scholar
2. Berenbaum, L. and Rosenberg, R., Proc. Conf. on Reliability Physics (IEEE), 136 (1971).Google Scholar
3. Mayumi, S., Unemoto, T., and Shishino, M., Proc. Conf. Reliability Physics (IEEE), 15 (1987).Google Scholar
4. UMemura, E., Onoda, H., and Madokoro, S., Proc. IEEE IRPS, 230 (1988).Google Scholar
5. Pramanik, D., Saxena, A.V., Solid State Tech., 73 (1990).Google Scholar
6. Ramaswami, S., and Bivas, A., Proc. VMIC, 426 (1991).Google Scholar
7. Ono, H., Ushiku, Y., and Yoda, T., Proc. VMIC, 76 (1990).Google Scholar
8. Groothuis, S.K., and Schroen, W.H., Proc. IEEE IRPS, 1 (1987).Google Scholar
9. Yue, J.T., Proc. IEEE IRPS, 126 (1985).Google Scholar
10. Fujii, T., Okuyama, K., Moribe, S., Torii, T., Kato, H., Agatsuma, T., Proc. IEEE VMIC, 477 (1989).Google Scholar
11. Nagasawa, E., Okabayashi, H., Nozaki, T., Nikawa, K., Proc. IEEE IRPS, 64 (1979).Google Scholar
12. Hoffman, V., Solid State Tech., 119 (1983).Google Scholar
13. Park, M., Krause, S.J., and Wilson, S.R. in Advanced Metallization and Processing for Semiconductor Devices & Circuits II (Mat. Res. Soc. Proc., 260, Pittsburgh, PA 1992) 799.Google Scholar