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Effect of TiN ARC on Electromigration Performance of Tungsten Plug Via

Published online by Cambridge University Press:  22 February 2011

Nguyen D. Bui ,
Van H. Pham ,
D. David Forsythe ,
Raymond T. Lee  and
John T. Yue
Nguyen D. Bui
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963, E-mail:, [email protected]
Van H. Pham
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
D. David Forsythe
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
Raymond T. Lee
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
John T. Yue
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
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Abstract

The effect of TiN Anti-Reflective Coating (ARC) layer capping of metal, in a multilevel interconnect system, on the reliability of the tungsten (W) plug has been investigated. EM study on Kelvin via showed that the thin TiN ARC Kelvin via lifetime exhibited a reduction of one order of magnitude compared to that of the thicker ARC thickness (1000Å) when they were stressed in a certain direction. A new testing technique, used to investigate the effect of ARC thickness on the W-plug electromigration (EM) performance, is discussed. The simulation results of current distribution confirmed the proposed failure model of EM performance of W-plug via with different ARC thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 471
Copyright
Copyright © Materials Research Society 1994

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References

REFERNCES

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