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Effect of Thermal Strain on Domain Fraction in a-/b-axis-oriented Epitaxial Bi4Ti3O12 Films

Published online by Cambridge University Press:  01 February 2011

Takayuki Watanabe ,
Hitoshi Morioka ,
Shoji Okamoto ,
Masatake Takahashi ,
Yuji Noguchi ,
Masaru Miyayama  and
Hiroshi Funakubo
Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Hitoshi Morioka
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Shoji Okamoto
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Masatake Takahashi
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo153–8505, Japan
Yuji Noguchi
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo153–8505, Japan
Masaru Miyayama
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo153–8505, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan PRESTO, JST, 4–1–8 Honcho, Kawaguchi, Saitama 332–0012, Japan
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Abstract

a-/b-axis-oriented epitaxial Bi4Ti3O12 and neodymium-substituted Bi4Ti3O12 films with a different a-domain fraction, V(100)/[V(100)+V(010)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm2 for a pure a-axis-oriented (Bi3.5Nd0.5)Ti3O12 film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C4.2
Copyright
Copyright © Materials Research Society 2004

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