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Effect of Thermal Processing Conditions on Ferroelectric PZT Thin Films

Published online by Cambridge University Press:  16 February 2011

Chi K. Kwok ,
Seshu B. Desu  and
Lee Kammerdiner
Chi K. Kwok
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061.
Seshu B. Desu
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061.
Lee Kammerdiner
Affiliation:
Ramtron Corporation, Colorado Springs, CO 80918.
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Abstract

Ferroelectric and transparent lead–zirconate–titanate thin films were fabricated by rf sputtering. The substrates used were Pt–coated single crystal silicon. The deposition temperatures were relatively low (≅ 200°C). Annealing at high temperatures yielded first pyrochlore type and finally perovskite with good switching characteristics. The phase structure, microstructure, surface composition, and properties were measured as a function annealing time and temperature. In general, the Pb concentration on the surface decreased with increasing annealing temperature or time, whereas Zr concentration increased. It was observed that the grain size of perovskite PZT did not show any significant changes with increasing either anneal temperature or time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 83
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1) Okada, A., J.Appl.Phys., 48, 2905 (1977).Google Scholar
2) Scott, J.F., et al., J.Appl.Phys., 64, 166 (1989).Google Scholar
3) Land, C.E. and Smith, W.E., Appl.Phys.Lett., 23, 57 (1973).Google Scholar
4) Varnado, S.G. and Smith, W.E., IEEE J.Quantum Electron., 8, 88 (1972).Google Scholar
5) Maldonado, J.R. and Meitzler, A.M., IEEE Trans.Electron Devices, ED–17, 148 (1970).Google Scholar
6) Ohono, K. and Hirano, M., Jpn.J.Appl.Phys., 12, 317 (1973).Google Scholar
7) Takayama, R. and Tomita, Y., J.Appl.Phys., 65, 1666 (1989).Google Scholar
8) Sreenivas, K. and Sayer, M., J.Appl.Phys., 64, 1484 (1988).Google Scholar
9) Castellano, R.N. and Feinstein, L.G., J.Appl.Phys., 50, 4406 (1979).Google Scholar
10) Oikawa, M. and Toda, K., Appl.Phys.Lett., 29, 491 (1976).Google Scholar
11) Yi, G., Wu, Z. and Sayer, M., J.Appl.Phys., 64, 2717 (1988).Google Scholar
12) Chrisey, D.B., Private Communication.Google Scholar
13) Desu, S.B., Shi, T. and Kwok, C.K., Unpublished Results.Google Scholar
14) Desu, S.B. and Kwok, C.K., This Proceedings.Google Scholar
15) Desu, S.B., Peng, C.H., Kammerdiner, L. and Schuele, P.J., This Proceedings.Google Scholar
16) Desu, S.B. and Payne, D.A., J.Amer.Ceram.Soc., submitted.Google Scholar
17) Kwok, C.K. and Desu, S.B., in preparation.Google Scholar