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Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

Published online by Cambridge University Press:  17 March 2011

Laurent Grenouillet ,
Catherine Bru-Chevallier ,
Gérard Guillot ,
Philippe Gilet ,
Philippe Ballet ,
Philippe Duvaut ,
Andrè Chenevas-Paule  and
Alain Million
Laurent Grenouillet
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
Catherine Bru-Chevallier
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
Gérard Guillot
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS 5511), INSA Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France
Philippe Gilet
Affiliation:
LETI/CEA-G – DOPT, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
Philippe Ballet
Affiliation:
LETI/CEA-G – DOPT, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
Philippe Duvaut
Affiliation:
LETI/CEA-G – DOPT, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
Andrè Chenevas-Paule
Affiliation:
LETI/CEA-G – DOPT, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
Alain Million
Affiliation:
LETI/CEA-G – DOPT, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France
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Abstract

We report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Choquette, K. D., Klem, J. F., Fischer, A. J., Blum, O., Allerman, A. A., Fritz, I. J., Kurtz, S. R., Breiland, W. G., Sieg, R., Geib, K. M., Scott, J. W., and Naone, R. L., Electron. Lett. 36, 1388 (2000).Google Scholar
2. Grenouillet, L., Bru-Chevallier, C., Guillot, G., Gilet, P., Duvaut, P., Vannuffel, C., Million, A., and Chenevas-Paule, A., Appl. Phys. Lett. 76, 2241 (2000).Google Scholar
3. Gilet, P., Chenevas-Paule, A., Duvaut, P., Grenouillet, L., Holliger, P., Million, A., Rolland, G., and Vannuffel, C., Phys. Status Solidi A 176, 279 (1999).Google Scholar
4. Street, R. A., Searle, T. M., and Augustin, I. G., in Amorphous and Liquid Semiconductors, edited by Stuke, J. and Brenig, W. (Taylor and Francis, London, 1974), p. 953.Google Scholar
5. Gillin, W. P., J. Appl. Phys. 85, 790 (2000).Google Scholar
6. Xin, H. P., Kanavagh, K. L., Kondow, M., and Tu, C. W., J. Cryst. Growth, 201/202, 419 (1999).Google Scholar
7. Li, L. H., Pan, Z., Zhang, W., Lin, Y. W., Zhou, Z. Q., and Wu, R. H., J. Appl. Phys. 87, 245 (2000).Google Scholar
8. Buyanova, I. A., Pozina, G., Hai, P. N., Thinh, N. Q., Bergman, J. P., Chen, W. M., Xin, H. P., and Tu, C. W., Appl. Phys. Lett. 77, 2325 (2000).Google Scholar